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The data preparation ( design
of structures ) is based on work with hierarchical multylayered database
of lithographical structures. The special architecture of the database
provides on the one hand fast search and access to elements located in
direct vicinity of each other (what is very important for data processing
and display). On the other hand hierarchy of data permits to create very
complex structures with the minimum sizes of a database file by itself.
The support of various types
of data formats (such as AutoCad exchange format, standard Geometrical
Data Stream II, GDSII, etc.) grants an opportunity to prepare initial data
for lithography with the help of other software or to use data designed
earlier as well as to export data for processing by other CADs.
Varified method and technique
of correction of effect of proximity permits with guarantee to remove influence
of proximity effect and to obtain lithography with known accuracy. There
is the version which allows one to make proximity correction of 3D structures,
that is to create structures with predefined (designed) micro/nano relief
in a resist.
The realized technique of
modeling resist development permits to obtain quickly and clearly result
of the lithography (a form of a resist surface), without real exposure
and development. The numerous experimental checks have confirmed high quality
and reliability of simulation.
Built - in "expert system"
assists one to define significant parameters resist and substrate, as well
as a necessary basic time of a exposure. A opportunity of expansion of
the database of resists and substrates is implemented.
The interactive graphic editor
of hierarchical geometrical structures permits to execute designing of
structures for lithography in a convenient graphic form, providing various
ways of data display and additional data processing.
The acquisition of videosignal
from a lithograph permits to obtain the digital image (in TIFF format )
and provides further image processing and recognition. For example, for
recognition of markers at the next lithography.
Convenient interactive tools
grant an opportunity to make exact set-up of scanning fields, set-up of
coordinate systems of a stage, to measure characteristics of distortion
and to determine parameters of dynamic delays of a beam. Special algorithms
enabling to compensate mentioned above distortions are developed and built
- in.
The support of various types
of stages enables to be set up practically any equipment and provides creation
of structures of large sizes, which can not be made in one exposure field.
Your comments and suggestions are invited: M.Korotkov
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